SEMATECH at SPIE

Dozens of papers highlighting SEMATECH research will be featured this year at the SPIE Advanced Lithography Conference on February 22-27 in San Jose, CA. In addition, SEMATECH will host a number of technical and working group meetings during the conference.

SEMATECH Research

Papers authored or co-authored by SEMATECH researchers, or highlighting SEMATECH research include:

Alternative Lithographic Technologies

  • Nanopit smoothing by cleaning 
    Tuesday, 24 February • 4:30 PM – 4:50 PM
  • Protection efficiency and commercial availability of a standards-compliant EUV reticle handling solution
    Tuesday, 24 February • 5:30 PM – 5:50 PM
  • The SEMATECH Berkeley microfield exposure tool: learning at the 22-nm node and beyond 
    Wednesday, 25 February • 9:00 AM – 9:20 AM
  • Out-of-band exposure characterization with the SEMATECH Berkeley 0.3-NA microfield exposure tool 
    Wednesday, 25 February • 9:20 AM – 9:40 AM
  • Estimation of cost comparison of lithography technologies at the 22-nm half-pitch node 
    Wednesday, 25 February • 9:40 AM – 10:00 AM
  • SEMATECH research activities on EUV full-field exposure tool 
    Wednesday, 25 February • 8:40 AM – 9:00 AM
  • SEMATECH’s NanoImprint Program: a key enabler for nanoimprint introduction 
    Wednesday, 25 February 2009 • 3:50 PM – 4:10 PM
  • Improving the performances of the AIT with an optimized alignment procedure 
    Thursday, 26 February • 10:00 AM – 10:20 AM
  • Assessment of EUV resist readiness for 32-nm hp manufacturing and extendibility study of EUV ADT using state-of-the-art resists 
    Thursday, 26 February • 10:50 AM – 11:10 AM
  • EUVL-resist outgassing measurements and calibrations for high-volume manufacturing (HVM) 
    Thursday, 26 February • 11:30 AM – 11:50 AM
  • Defect mitigation and reduction in EUVL mask blanks
    Thursday, 26 February • 5:30 PM
  • Assumptions and trade-offs of extreme-ultraviolet optics contamination modeling 
    Thursday, 26 February • 5:30 PM
  • Mask defect verification using actinic inspection and wafer inspection tools 
    Thursday, 26 February • 5:30 PM
  • Collecting EUV mask images through focus by wavelength tuning 
    Thursday, 26 February • 5:30 PM
  • Effect of carbon contamination of EUV masks on imaging 
    Thursday, 26 February • 5:30 PM
  • RLS tradeoff versus quantum yield of high PAG EUV resists 
    Thursday, 26 February • 5:30 PM
  • Measurement of particle flux at the intermediate focus of a DPP source 
    Thursday, 26 February • 5:30 PM
  • The influence of out-of-band radiation on EUV optics contamination 
    Thursday, 26 February • 5:30 PM

Metrology, Inspection, and Process Control for Microlithography

  • CD-SEM parameter influence on image resolution and measurement accuracy 
    Monday, 23 February • 1:40 PM – 2:00 PM
  • Reference metrology in a research fab: the NIST Clean Calibrations Program 
    Monday, 23 February • 3:20 PM – 3:40 PM
  • MOSAIC: a new wavefront metrology 
    Monday, 23 February • 4:30 PM – 4:50 PM
  • Phenomenology of electron-beam-induced photoresist shrinkage trends 
    Monday, 23 February • 5:30 PM
  • Nonplanar high-k dielectrics thickness measurement using CD-SAXS 
    Monday, 23 February • 5:30 PM
  • Assessing, monitoring, and driving continuous improvements in fleet measurement uncertainty 
    Thursday, 26 February • 8:40 AM – 9:00 AM
  • Through-focus scanning and scatterfield optical methods for advanced overlay target analysis 
    Wednesday, 25 February • 11:40 AM – 12:00 PM
  • Development of independent traceability for optical scatterometry 
    Tuesday, 24 February • 3:40 PM – 4:00 PM

Advances in Resist Materials and Processing Technology

  • High-index nanocomposite photoresist for 193-nm lithography 
    Monday, 23 February • 5:30 PM
  • High-refractive index nanoparticles for 193-nm immersion lithography 
    Monday, 23 February • 5:30 PM
  • Toward the design and development of 193-nm generation three immersion fluid candidates 
    Monday, 23 February • 5:30 PM
  • Correlation of EUV resist performance metrics in micro-exposure and full-field EUV projection tools 
    Tuesday, 24 February • 5:50 PM – 6:10 PM
  • Non-CA resists for 193-nm immersion lithography: effects of chemical structure on sensitivity 
    Wednesday, 25 February • 9:00 AM – 9:20 AM

Optical Microlithography

  • High-index 193-nm immersion lithography: the beginning or the end of the road 
    Thursday, 26 February • 5:30 PM
  • Optimizing material interactions in hard-mask patterning stacks 
    Thursday, 26 February • 5:30 PM

Related Meetings

EUV Mask Metrology Workshop
Thursday, February 19 • 8:30 AM - 5:00 PM
View a PDF of the meeting agenda
For more information contact: Pat Gabella

MASC
Friday, February 20 • 8:30 AM - 4:00 PM
For more information contact: Henry Yun

IEUVI Mask Technical Working Group
Sunday, February 22 • 1:00 PM - 5:00 PM
View a PDF of the meeting agenda
For more information contact: Kevin Orvek

EUV Sources for Metrology Applications
Tuesday, February 24 • 6:30 AM - 7:30 AM
View a PDF of the meeting agenda
For more information contact: Andrea Wuest

EUV Steering Committee
Wednesday, February 25 • 7:00 AM - 8:00 AM

Immersion Steering Committee
Thursday, February 26 • 7:00 AM - 8:00 AM

IEUVI Optics Contamination Technical Working Group
Thursday, February 26 • 1:00 PM - 4:00 PM
View a PDF of the meeting agenda
For more information contact: Andrea Wuest

IEUVI Resist Technical Working Group
Thursday, February 26 • 1:00 PM - 5:00 PM
View a PDF of the meeting agenda
For more information contact: Jacques Georger

IEUVI Source Technical Working Group
Thursday, February 26 • 1:00 PM - 5:00 PM
View a PDF of the meeting agenda
For more information contact: Frank Goodwin

IEUVI Board Meeting
Friday, February 27 • 7:00 AM - 11:00 AM
For more information contact: Yumiko Takamori