SEMATECH News

SEMATECH Experts Report Progress on Enabling EUVL at SPIE

Papers provide innovative and practical options for realizing the semiconductor roadmap for the 22 nm half-pitch node and beyond

Albany, NY and Austin, TX (11 February 2009) – SEMATECH and International SEMATECH Manufacturing Initiative (ISMI) experts will present world-leading research and development results on extreme ultraviolet (EUV) manufacturability and extendibility, alternative lithography, and related areas of metrology at the SPIE Advanced Lithography 2009 conferences on February 22-27 at the San Jose Convention Center and Marriott in San Jose, CA.

SEMATECH engineers will report progress on assessing EUV lithography (EUVL) manufacturability, advancing EUVL extendibility, and alternative lithography. Their findings will be showcased in 12 papers demonstrating breakthrough results in exposure tool capability, resist advances, defect-related inspection, reticle handling, and nanoimprint.  

“We are enthusiastic about sharing our progress on some of the most critical determiners for the development of EUV infrastructure,” said Bryan Rice, director of Lithography at SEMATECH.

“SEMATECH’s leadership in enabling EUVL pilot line readiness and in researching new techniques for advancing EUV extendibility and alternative lithography, coupled with access to the full-field exposure tool located at the University at Albany’s College of Nanoscale Science and Engineering, demonstrates how our research continues to support EUV readiness for the 22 nm half-pitch node,” he added.

In addition to the EUV results, ISMI engineers will present on critical dimension-scanning electron microscopy (CD-SEM) metrology and process control. ISMI’s Metrology program is focused on the 32 nm and 22 nm generations, to facilitate lithographic innovation, improve manufacturing productivity, and reduce manufacturing costs.

Presentations led by SEMATECH and ISMI experts at SPIE include the following:

Tuesday, February 24

  • Nanopit smoothing by cleaning – Introduction of a new technique for smoothing pit defects on EUV mask substrates based on non-isotropic etch processes.
    4:30 p.m. - Alternative Lithographic Technologies conference
  • Protection efficiency and commercial availability of a standards-compliant EUV reticle handling solution – Performance results of a commercial carrier, using the world’s most advanced inspection capability of 40 nm polystyrene latex (PSL) equivalent.
    5:30 p.m. - Alternative Lithographic Technologies conference
  • CD-SEM parameter influence on image resolution and measurement accuracy – Demonstration of experimental SEM resolution results, including influences of many different parameters such as SEM focus and stigmation, filter, and threshold levels.
    1:40 p.m. - Metrology, Inspections, and Process Control for Microlithography conference

Wednesday, February 25

  • SEMATECH research activities on EUV full-field exposure tool – Performance evaluation of an alpha demo tool (ADT) exposure tool, looking specifically at the status of EUVL and its supporting infrastructure.
    8:40 a.m. - Alternative Lithographic Technologies conference
  • Estimation of cost comparison of lithography technologies at the 22 nm half-pitch node – Comparison of key cost factors for different lithography candidates, their corresponding cost targets, and the cost dependence of different types of integrated devices on lithography technology.
    9:40 a.m. - Alternative Lithographic Technologies conference
  • SEMATECH’s nanoimprint program: a key enabler for nanoimprint introduction – Explores many of the critical aspects of the nanoimprint process and drive key improvements in overlay, template cleaning, and defectivity toward making nanoimprint technology a cost-effective alternative for CMOS development and manufacturing applications.
    3:50 p.m. - Alternative Lithographic Technologies conference
  • Phenomenology of electron-beam-induced photoresist shrinkage trends – Examines the readiness of SEM metrology for the challenges presented by both dry and immersion ArF lithographies and will calculate the errors involved in estimating the original CD from the shrinkage trend.
    4:10 p.m. - Metrology, Inspections, and Process Control for Microlithography conference

Thursday, February 26

  • Assessment of EUV resist readiness for 32 nm half-pitch manufacturing and extendibility study of EUV ADT using state-of-the-art resists – Provides an assessment of EUVL resist readiness for 32 nm half-pitch manufacturability using a full-field ADT scanner and demonstrate ADT extendibility with state-of-the-art EUV resists.
    10:50 a.m. - Alternative Lithographic Technologies conference

For a complete listing of papers authored or co-authored by SEMATECH researchers and/or highlighting SEMATECH research, see http://www.sematech.org/corporate/news/features/spie2009.htm.