SEMATECH Timeline
1986
The idea is born. Prompted by several
years of slipping U.S. semiconductor
market share, the Semiconductor Industry
Association (SIA) and the Semiconductor
Research Corporation (SRC) hold a
joint meeting in May and issue a
call for cooperation to provide the
U.S. semiconductor industry with
the capability of regaining world-leadership
in semiconductor manufacturing. 
In
November the SIA board establishes
a steering committee chaired by Charles
Sporck to create a plan for a cooperative
industry-government manufacturing
venture.
1987
Site proposals are invited
and submitted, and SEMATECH is incorporated
with 13 charter members. In
December, Congress approves and President
Reagan signs into law the first year
of funding for SEMATECH.
1988
Austin, Texas is selected as home
to SEMATECH. Robert
Noyce is named Chief Executive Officer. SEMATECH
converts a warehouse into a class
1 clean room facility in just 32
weeks and dedicates the SEMATECH
facility in November. SEMATECH
initiates its University Centers
of Excellence program in partnership
with SRC.
1989
SEMATECH produces
its first wafer lot in March. The
consortium initiates its first partnerships
with national laboratories, Sandia
National Laboratories and Oak Ridge
National Laboratory. SEMATECH
announces an agreement of cooperation
with the Waco-based Texas State Technical
Institute (TSTI) and the Center for
Occupational Research and Development
(CORD) to assist in the development
of educational curricula in semiconductor
manufacturing.
1990
SEMATECH and the Joint European
Submicron Silicon Initiative (JESSI)
agree on their first collaborative
projects. SEMATECH
demonstrates capability to manufacture
0.5 micron circuitry using all American-made
equipment. William
J. Spencer accepts the post of Chief
Executive Officer in October.
1991
Robert Galvin of Motorola, Inc.,
is elected chairman of the board. The
National Advisory Committee on Semiconductors
(NACS) holds its Micro Tech 2000
Workshop, and the resulting
report, which outlines a vision of
products and processes required for
the U.S. semiconductor industry,
becomes a precursor for future semiconductor
technology roadmaps. SEMATECH
establishes a 200 mm Project Core
Team and begins conversion
of research facilities from 6-inch
(150 mm) to 8-inch (200 mm)
silicon wafers.
1992
SEMATECH completes the conversion
of its Advanced Tool Development
Facility to 200 mm wafers in June. SIA's
first National Technology Roadmap
for Semiconductors Workshop is held
in November. VLSI
Research announces that U.S. semiconductor
firms will account for 44 percent
of worldwide semiconductor revenues
in 1992 to lead the world in chip
sales for the first time since 1984.
SEMATECH
demonstrates a 0.35-micron process
flow on 200 mm wafers using all American-made
equipment.
1993
The first edition of the National Technology Roadmap for Semiconductors is published in March. To parallel technology areas identified in the Roadmap, SEMATECH's Board of Directors broadens the SEMATECH charter to include packaging, test, design, and materials technologies.
1994
The National
Technology Roadmap for Semiconductors is
updated and published in November.
SEMATECH
participates in an international
summit in Tokyo in November where
agreement is reached on next-generation
wafer size (300 mm).
1995
SEMATECH's Board of Directors approves
a new business model that positions
the consortium to operate without
federal funding.
The
first International Symposia on
193 nm technology is held to
accelerate development of lithography
technologies.
The
International 300 mm Initiative
(I300I) is incorporated as a subsidiary
of SEMATECH in November with both
US and non-U.S. companies.
1996
SEMATECH's
Advanced Technology Development
Facility produces its first 300
mm wafer.
SEMATECH's
Productivity Analysis group publishes
tool requirements for 0.18-micron
ICs on 200 mm wafers and 0.25-micron
ICs on 300 mm wafers and
0.18 micron ICs on 300 mm wafers.
Bill
Spencer is elected chairman of
the board in July replacing Robert
Galvin who is named vice chairman.
SEMATECH
organizes the Partnering for Workforce
Development program to establish
semiconductor technology programs
in community colleges throughout
the U.S.
1997
I300I
and J300, the Japanese-led 300 mm
development effort, sign the Global
Joint Guidance Agreement to identify
the 300 mm standards requirements
of global device makers. SEMATECH
announces the production of its first
copper metalized wafers and the
first integration of low-k dielectric
insulating materials with copper
metalization. SEMATECH
hosts the Next-Generation Lithography
Workshop involving experts from all
over the world. Mark
Melliar-Smith is elected chief executive
officer, replacing Spencer who retires
as CEO.
1998
SEMATECH launches a new subsidiary,
International SEMATECH, expanding
the involvement of its non-US members
in programs on 300 mm, lithography,
ESH, and manufacturing methods. I300I
completes thirty-two 300 mm tool
demonstrations, and enters into an
agreement with Selete to facilitate
joint tool demonstrations and the
sharing of results from 300 mm equipment
evaluations.
Front
End Processes Research Center is
established with the Semiconductor
Research Corporation (SRC) and three
universities to conduct fundamental
research on materials and processes
for sub-100 nm device technology.
1999
The Industry Executive Forum (IEF)
is established to promote open
communication with global equipment
supplier company executives on semiconductor
industry challenges.
Participants
at International SEMATECH's Next
Generation Lithography (NGL) workshop
agree to continue development of
two NGL technology options: EUV and
EPL. International
SEMATECH data aids the World Semiconductor
Council's decision to reduce PFC
emissions in the industry by ten
percent worldwide.
2000
In January, SEMATECH's name officially
changes to International SEMATECH,
reflecting a unified global consortium. International
SEMATECH completes installation
of the SVGL Micrascan 193 nm
ArF Exposure System, one of the most
advanced optical lithography scanners
in the world. 157 nm
exposure capability is established
in the Resist
Test Center (RTC) using an Exitech
157 nm Microstepper, the world's
first F2 VUV laser processing system
commercially available. The first
images produced by a commercial resist
supplier using the RTC Microstepper
are achieved.
The
First International Symposium on
157 nm Lithography drives industry
acceptance of the manufacturability
of optical
lithography to below the 100 nm technology
node. OB
Bilous is named chairman of International
SEMATECH Board of Directors.
2001
The e-Diagnostics
program establishes key guidelines
for the industry and announces expansion
of program to include collaboration
with Japanese consortia Selete and
JEITA for global standards consensus. Bob
Helms is named President and CEO of
International SEMATECH.
2002
Tokyo
Electron becomes International SEMATECH’s
first “supplier room” tenant. International
SEMATECH wins the EPA’s prestigious
Climate Protection Award. An
industry effort is launched to define
a single set of requirements and
objective tests for certifying 300
mm equipment. International
SEMATECH and The University at Albany-SUNY
announce $320M strategic alliance
to develop tool infrastructure for
extreme ultraviolet (EUV) lithography.
An
ultra low-k dual damascene process
is qualified on 300mm tools, enhancing
300mm processing capability.
2003
International SEMATECH begins the
year with the formal opening of its
advanced EUV program at UAlbany.
Dr.
Michael R. Polcari, Vice President
of Procurement Engineering for IBM
Global Procurement, becomes the consortium's
new President and CEO.
The
Lithography Division sponsors the
semiconductor industry's second immersion
workshop, where no significant barriers
are found to implementing the potentially
revolutionary technique. International
SEMATECH technologists report breakthroughs
in high-k processing and gate dielectric,
low-k materials, and automated material
handling. Gov.
Rick Perry and the Texas Legislature
approve
funding for advanced materials research
to be led by International SEMATECH
and Texas universities. 
In
November, International SEMATECH
launches a new, wholly owned consortium—International
SEMATECH Manufacturing Initiative
(ISMI)—to help semiconductor
manufacturers increase productivity
and lower costs.
2004
International SEMATECH holds industry-wide
meeting on Lithography; industry
representatives select 193 nm
immersion as the most likely candidate
for manufacturing for
2007-2009. The
State of Texas and International
SEMATECH announce the formation
of the Advanced Materials Research
Center (AMRC) with the University
of Texas (UT) System and other Texas
universities to investigate emerging
semiconductor technologies and help
ensure the state’s high-tech
future. International
SEMATECH and Exitech announce agreement
to develop the world’s first
ultra high numerical aperture (NA
= 1.3) 193 nm wavelength immersion
lithography tool. 
International
SEMATECH announces its latest subsidiary,
Advanced Technology Development Facility
(ATDF) as a for-profit research facility.
In
September of 2004, the parent company,
International SEMATECH, once again
becomes SEMATECH.
2005
SEMATECH achieves twin breakthroughs
in channel mobility and reliability
of high-k/metal gate transistors
in preparation for 45 nm half
pitch. 
Giang
Dao from Intel promoted to vice president
and chief operating officer for Advanced
Technology at SEMATECH. Texas
start-up companies Molecular Imprints,
Zyvex, OrganicID, and Xidex, receive
technological and financial assistance
from the AMRC, a collaboration of
the State of Texas, SEMATECH, and
Texas research universities. ATDF
selected by Acorn Technologies to
fabricate its XMOS technology. SEMATECH's
Immersion Technology Center receives
key immersion lithography tool from
Amphibian Systems. Samsung
joins ISMI and later becomes a full
member of SEMATECH. ISMI
holds second manufacturing symposium
discussing materials innovation,
gigafabs, the future of Moore's Law
and 450 mm wafers. ISMI
identifies nearly $500 million in
potential energy savings for industry
fabs.