00033918A-TR Abstract: Alternating Phase Shift Mask (PSM) Phase Defect Printability for 130 nm and 100 nm KrF Lithography

SEMATECH DOC ID #: 00033918A-TR

Title: Alternating Phase Shift Mask (PSM) Phase Defect Printability for 130 nm and 100 nm KrF Lithography

Author(s): Alvina Williams;Juhwan Kim;Ron Gordon;Wang-Pen Mo;

Document date: 05/19/2000

Descriptor(s): atomic force microscopy;critical dimension;deep ultraviolet lithography;phase shifting masks;defect detection;pattern defects;scanning electron microscopy;

Abstract: This document covers a study to determine the maximum non-printable phase
defects for 130 nm and 100 nm linewidths by using a KrF deep ultraviolet
(DUV) scanner. It is part of an effort to extend optical lithography to the
sub-wavelength region for very low K1 patterning processes. This study used
resist simulations verified by wafer printing results to predict printable
defects for denser patterns. It also tested mechanical repair tools for phase
bump defects and compared electromagnetic field (EMF) three-dimensional
simulation with commercialized two-dimensional tools for phase defect
printability.

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