5th International Symposium on Advanced Gate Stack Technology
Call for Papers
Global semiconductor manufacturers, suppliers, researchers, and academia are invited to submit abstracts outlining new experimental work, notable research results, and ideas for future direction to the 5th International Symposium on Advanced Gate Stack Technology.
The program will include speakers from all areas of science and technology in advanced gate stack, including but not limited to the following:
- High-k dielectric materials for future scaling
- Application of gate stack materials for RF and Mixed Signal devices (passive and active)
- Physics and chemistry of dielectric and defects
- Gate stack materials for non-Si channel (Ge, III-V, graphene)
- Modeling of gate stack structure and interface
- Surface pre-treatment for alternative channel materials
- Electrical characterization methods for alternative channel devices
- Reliability issues of metal/high-k dielectric gate stack (Lifetime extrapolation, defect mechanisms, radiation damage)
- High-k dielectric, nitride dielectric for memory applications
- Gate stack for NEMS devices
Abstract Submissions
Abstracts in (MS Word or PDF only) should be two-page (maximum) and include the selected topic, summary of significant results and conclusions. Please include the names and affiliation of all authors, as well as the e-mail address of the lead author.
Submit abstracts to agst@sematech.org by July 15, 2008.
Authors are also invited to expand their papers for submission to a special edition of Microelectronics Engineering to be published after the Symposium. Only full papers submitted by September 29, 2008 will be considered for publication. When submitting an abstract, please indicate if you also plan to submit a full paper for this publication.
Important Dates
| Abstract Submission Deadline | July 15, 2008 |
| Notification of Acceptance | August 5, 2008 |
| Final Presentation Due | September 5, 2008 |
| Full Papers Due (optional) | September 29, 2008 |
Contact agst@sematech.org for answers to questions about this Conference.
