New Channel Materials for Future MOSFET Technology

04 December 2005

(All files are in PDF format unless otherwise indicated)

Panel Discussion I: Ge Device Technology

• Sanjay Banerjee (UT-Austin)
• Albert Chin (National ChiaoTung University)
• Chi On Chui (Intel)
• Dimitri Antoniadis (MIT)
• Yoshiki Kamata (Toshiba)
• Krishna Saraswat (Stanford)
• Ghavam Shahidi (IBM)
• Akira Toriumi (University of Tokyo)

Panel Discussion II: III-V Device Technology

• Doug Barlage (NCSU)
• Minghwei Hong (National TsingHua University)
• T. P. Ma (Yale)
• Matthias Passlack (Freescale)
• Devendra Sadana (IBM)
• Wilman Tsai (Intel)
• Peide Ye (Purdue)