2005 International EUVL Symposium

November 7-9, 2005
San Diego, CA

	Download ZIP file of entire symposium proceedings (225 Mb)
2005 EUVL Symposium Opening Address	Kevin Kemp, SEMATECH/Freescale
Keynote	Paolo Gargini, Intel
Session: Tool
Progress on the Realization of EUV Lithography	Hans Meiling
Canon's Development Status of EUVL Technologies	Shigeyuki Uzawa
Progress on the development of EUV exposure tool in Nikon	Takaharu Miura
EXCITE, the MEDEA+ Extreme UV Consortium for Imaging Technology	Peter Zandbergen
EUVL capabilities at Albany NanoTech	James Ryan
Session: Source 1
Next Generation Extreme Ultraviolet Sources for Lithography Applications	Vadim Banine
Development Status of EUV Sources for Use in Beta-Tools and High Volume Chip Manufacturing Tools	Uwe Stamm
Xe- and Sn-fueled Z-pinch EUV source development aiming at HVM	Yusuke Teramoto
EUV Generation Using a Droplet of Tin Particle Suspension	Toshihisa Tomie
ASIA/PACIFIC REGIONAL UPDATE	Yasuhiro Horiike, National Institute of Material Science (NIMS), Japan
Invited Speaker - Asia/Pacific
Development of CO 2 Laser Produced Xe Plasma EUVL Source for Microlithography	Hakaru Mizoguchi
Session: Source 2
LPP EUV Source Development for HVM	Bjorn Hansson
The Philips' Extreme UV Source: Recent Progress in Power, Lifetime and Collector Lifetime	Joseph Pankert
Optimisation of Optical Design in Grazing Incidence Collector for EUVL DPP Sources	Fabio Zocchi
Progress Towards Sn DPP and LPP Solution: a source-collector perspective	David N. Ruzic
Session: Source 3
The Tin-Doped Droplet Laser Plasma Source – Satisfying EUVL Requirements	Martin Richardson
Comprehensive Integrated Simulation and Optimization of Laser Produced Plasma for EUV Lithography Devices	Ahmed Hassanein
Radiation Hydrodynamic Simulation of EUV Emission from Laser-Produced Plasmas	Atsushi Sunahara
Session: Mask 1
EUV lithography related inspection and metrology research activities at MIRAI	Tsuneo Terasawa
Actinic Inspection of Multilayer Coated EUV Masks at the ALS	Anton Barty
Extreme Ultraviolet Phase Contract Imaging of Mask Defects	Gregory Denbeaux
EU REGIONAL UPDATE	Rob Hartman, ASML
Invited Speaker - Europe
The Integrated EUV Mask Process at the Advanced Mask Technology Center (AMTC) in Dresden	Uwe Dersch
Session: Resist 1
Patterning Performance of Molecular Resists from the ASET-HINA	Hiroaki Oizumi
Microstepper vs. Interference EUV lithography: effects on resist profiles	Mieke Goethals
EUV Resist Sensitivity Targets	Michael J. Leeson
Session: Mask 2
Smoothing EUVL mask substrate defects much faster and application of the smoothing process to real-world defects	Paul B. Mirkarimi
Critical Challenges of EUV Mask Blank Volume Production	Holger Seitz,
Development of Zero Expansion Glass for EUVL Substrate	Yasutomi Iwahashi
Session: Mask 3
Recent Advances in the Development a Low-Defect Mo/Si Deposition Tool and Process for EUVL Mask Blanks	Rajul Vandeev
Impact of Layout Dependent Flare on Printing in EUVL	Frank-Michael Kamm
Printing EUV Phase-shift Masks using the 0.3NA Berkeley Micro-exposure Tool	Bruno La Fontaine
Session: Resist 2
Resolution of EUV Photoresists Designed with Reduced Activation Energy	Jim Thackeray
Fundamentals of the Reaction-Diffusion Process in Model EUV Photoresists	Bryan D. Vogt
Lithographic performance of EUV resists based on polymers having a photoacid generator in the backbone	Ken Gonsalves
Session: Optics 1
Lithographic Characterization of Low-Order Aberrations in the Berkeley MET Tool	Patrick P. Naulleau
Optics for EUV Lithography	Peter Kuerz
Scaling EUV lithography beyond 0.25 NA with applications to patterning contacts	Manish Chandhok
Session: Contamination and Cleanliness 1
Model of Ru Surface Oxidation for the Lifetime Scaling of EUVL Projection Optics Mirror	Iwao Nishiyama
Interaction of Water Vapor with Clean and Contaminated Ru Surfaces	T.E. Madey
EUV Endurance Testing of Ruthenium-Capped Multilayer Mirrors	Shannon Hill
Contamination Sensing and Control for EUV Multilayer Optics	Anthony Keen
Lifetime Improvement of Projection Mirror with Ru Capping Layer for EUVL by Irradiation Atmosphere	Yukinobu Kakutani
U.S. REGIONAL UPDATE	Stefan Wurm, SEMATECH
Invited Speaker - North America
Investigation of the Current Resolution Limits of Advanced EUV Resists	Patrick P. Naulleau
Session: Contamination and Cleanliness 2
Protective Capping Layer for EUVL Optics Using TiO 2	Sasa Bajt
Lifetime estimation and improvement of capping layer on multi-layer mirror for EUV Lithography in EUVA	Shuichi Atsunari
Session: Metrology
High-precision (<1ppb/°C) Optical Heterodyne Interferometric Dilatometer for Low Thermal Expansion Materials	Yoshimasa Takeichi
Cross Section and Line Edge Roughness Metrology for EUV Lithography using Critical Dimension Small Angle X-ray Scattering (CD-SAXS)	Ron Jones
CD characterization of EUV masks by EUV scatterometry	Frank Scholze
Session: Mask 4
Recent Progress in EUV Blanks Development at HOYA	Tsutomu Shoki
Recent advances in the cleaning of EUV substrates	Abbas Rastegar
Scaling of the Adhesion between Particles and Surfaces from Micron-Scale to the Nanometer Scale for Photomask Cleaning Applications	Steve Beaudoin
Concept Demonstration of Integrated Particle Defect Control of EUVL Masks	Kevin Orvek
Improved Reticle Carrier Design Through Numerical Simulation	Anthony Geller
2005 EUVL Symposium Closing Remarks	Kevin Kemp
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