EUVL Symposium Abstracts

October 16, 2006
2006 EUV Symposium Opening Address Rob Hartman ASML

Tool 1

    
Nikon EUVL development progress update Takaharu Miura Nikon
Canon's Development Status of EUVL Technologies Shigeyuki Uzawa Canon
Progress on the Realization of EUV Lithography Hans Meiling ASML
Full-field imaging by the ASML EUV Alpha Demo Tool Rogier Groeneveld ASML

Source-1

    
Requirements and prospects of next generation Extreme Ultraviolet Sources for Lithography Applications V.Y. Banine ASML
Development of EUV sources with tin fuel and rotating disk electrodes Vladimir M. Borisov Trinity University
Collector optics integration into medium power EUV source systems Bernd Nikolaus EXTREME

Asian Pacific Region

   
Regional Update Ichiro Mori Selete
Invited Speaker: Summary of Japanese academic support program for EUVL source Yasukazu Izawa Osaka University

Source-2

    
Extending the lifetime of collector optics: advanced debris mitigation schemes and cleaning methods David Ruzic Universisty of Illinois Urbana Champaign
Table-Top EUV Lasers for Metrology Jorge J. Rocca Colorado State University

Resist-1

    
Investigation of lithographic metrics for the characterization of intrinsic resolution limits in EUV resists Patrick Naulleau Lawrence Berkeley National Laboratory
Performance of new molecular resist in EUV lithography H. Oizumi ASET EUV
Single Component Molecular Glass Resists for EUVL Clifford L. Henderson Georgia Institute of Technology
Quantitative Measurement of EUV Resist Outgassing Gregory Denbeaux University Albany
The design of chemically amplified resist for EUV lithography Ryoichi Takasu TOK

Mask-1

    
Smoothing EUVL mask substrate defects with an emphasis on real-world pits Paul B.Mirkarimi Lawrence Livermore Nat'l. Lab
Challenges of removing sub 40 particles in EUV mask blank cleaning Abbas Rastegar SEMATECH
Removal of Nano Particles on EUV Mask Buffer and Absorber Layers by Laser Shockwave Cleaning Kyu-Chae Kim Hangyang University
The Repair Performance Comparison for EUV Mask Moon Gyu Sung Samsung
Impact of 3-D Mask Effects on CD and Overlay over Image Field in Extreme Ultraviolet Lithography Sven Trogisch Qimonda
October 17, 2006
     
Symposium Keynote Martin Vandenbrink ASML

Source-3

    
High power EUV source development for beta-level and high-volume manufacturing lithography Uwe Stamm Xtreme Technologies
The Philips Extreme UV Source: recent progress in power, lifetime and collector lifetime Marc Corthout Philips Extreme
Development of high-power Sn-fuled DPP EUV source for enableing HVM Yusuke Teramoto EUVA
LPP Source Development for HVM EUV Lithography Björn A.M. Hansson Cymer
Development Status of HVM Laser Produced Plasma EUV Light Source Akira Endo EUVA

European Union Region

   
Regional Update Rob Hartman ASML
Invited Speaker: Optics for EUV Lithography Peter Kuerz Carl Zeiss SMT AG

Mask 2

    
Development of beta EUV mask blanks a Hoya Takeyuki Yamada Hoya Corporation
Current Status of EULV mask blank coating development in AGC Takashi SUGIYAMA Asahi Glass
Defect Mitigation and Reduction in EUVL Mask Blanks Rajul Randive Veeco Instruments
The study for image placement accuracy of EUV mask on the flat chuck Shusuke Yoshitake Nuflare
October 18, 2006
     
Plenary Talk: International EUV Initiative Paolo Gargini Intel

Resist-2

    
EUV Resist Materials Properties and Performance Michael Leeson Intel
EUV Resist material study for the outgassing reduction and LWR improvement Seiya Masuda Fujiphoto Film Co., Ltd.
Novel CA resist system for EUVL Takeo Watanabe University of Hyogo
Improved EUV Photoresist Performance through Processing Refinements Thomas Wallow AMD
EUV Resist Performance under High Stray Light Levels: an Interference Lithography Study Roel Gronheid IMEC

Metrology

    
Accuracy of the ASET Dilatometer for Low Thermal Expansion Materials Yoshimasa Takeichi ASET
Line edge roughness and cross sectional characterization of sub-50 nm structures using CD-SAXS Ronald L. Jones NIST
Development of EUV wavefront metrology system (EWMS) Katsuhiko Murakami EUVA, University Hyogo

US Region

   
Regional Update Stefan Wurm SEMATECH
Invited Speaker: Towards an Affordable Cost of Ownership Melissa Shell Intel

Contamination & Cleanliness

  
Contamination Cleaning of Ru-capped EUV Multilayer-Mirror with Atomic Hydrogen Iwao Nishiyama ASET
Essential procedures for endurance testing of multi-layer mirrors Shannon Hill NIST
Radiation-induced processes on Ru surfaces: relevance to EUVL Theodore E. Madey Rutgers
Carbon deposition on multi-layer mirrors by extreme ultra violet ray irradiation Takashi Aoki Nikon
Mo/Si multilayers capped by TiO2 Sergiy Yulin Fraunhofer

Defect Inspection

    
Comparison of actinic and non-actinic inspection of programmed-defect masks Kenneth A. Goldberg Lawrence Berkeley National Lab
State of the art EUV mask blank inspection with a Lasertec M7360 at the SEMATECH MBDC Patrick A. Kearney SEMATECH
Recent imaging results from the RIM-13 high-resolution EUV aerial image microscope M. Gower Exitech

Reticle Handling

    
Development of EUV pellicle for reticle defect  mitigation Yashesh A. Shroff Intel Corporation
EUVL Mask Carrier Development David Halbmaier Entegris
Status and Path to Particle-Free EUVL Reticle Protection Solution Long He SEMATECH
     
2006 EUV Symposium Closing Address