Keynote I |
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| ASML EUV Program: Status and Prospects | J. Benschop, ASML |
Session: Device Integration |
| EUV Lithography - Status and Key Challenges for HVM Implementation | S. Sivakumar, Intel |
| EUVL Projection on Samsung's Device Roadmap | J. Yeo, Samsung |
| EUV Lithography at the 22-nm Technology Node | O. Wood, GlobalFoundries |
Session: Source Collector Integration |
| Joint Requirements Update for EUV Source | K. Suzuki, Nikon |
| Sn DPP Beta SoCoMo Integration | M. Corthout, Philips EUV |
| LPP EUV Source Development and Productization | D. Brandt, Cymer, Inc. |
| Laser-Produced Plasma Source for EUV Lithography | H. Mizoguchi, Gigaphoton |
| Development and Performance of Grazing and Normal Incidence Collectors for the HVM DPP and LPP Sources | G. Bianucci, Media Lario Tech |
Session: Masks I |
| EUVL Masks: Progress and Issues | N. Hayashi, Dai-Nippon Printing |
| How Good Will EUV Masks Have to be to Meet LER Requirements? | P. Naulleau, LBNL |
| Implementing E-beam Correction Strategies for Compensation of EUVL Mask Non-Flatness | J. Sohn, SEMATECH |
| Investigation of Mask Defect Density in Full Field EUV Lithography | R. Jonckheere, IMEC |
| Strategy and Feasibility of Defect-Free Mask Fabrication to Enable EUVL | T. Liang, Intel |
Session: Resists I |
| Resolution, LWR, and Sensitivity Improvement on Polymer-Based Resist Materials | S. Tarutani, Fujifilm |
| EUV Resists Based on Low Acid Diffusion | J. Thackery, Rohm & Haas |
| Assessment of Resist Readiness for 22 HP EUV Lithography | T. Younkin, Intel |
| Acid Amplifiers Designed for EUV Resists Help Beat the RLS Trade-Off | R. Brainard, CNSE |
| Using the 0.3-NA SEMATECH Berkeley MET for Sub-22 nm Half Pitch Development | P. Naulleau, LBNL |
Keynote II |
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| Towards High-Volume Manufacturing of Logic Devices Using EUV Lithography | A. Yen, TSMC |
Session: Exposure Tools |
| EUVL Into Production -- Update on ASML's NXE Platform | J. Stoeldraijer, ASML |
| Nikon EUVL Development Progress Update | T. Miura, Nikon |
| Development Status of Canon's EUVL Exposure Tools | A. Mikyake, Canon |
| EUV Lithography with the Alpha Demo Tools | S. Lok, ASML |
| Next Step for Beyond 22 nm Node Application Using Full Field Exposure Tool | K. Tawarayama, Selete |
Session: Reticle Inspection I |
| EUV Reticle Inspection Gap | B. Rice, SEMATECH |
| Dynamic Scan Operation of Actinic EUVL Mask Blank Inspection System with TDI Mode | T. Terasawa, Selete |
| Critical Review of EUV Reticle Inspection Options | D. Wack, KLA-Tencor |
| Lessons Learned from Correlation Between EUV Mask Inspection, Blank Inspection and Wafer Print Analysis | R. Jonckheere, IMEC |
| Effects of Multilayer Depositions on the EUV Printability and DUV Inspectability of Substrate Pit Defects | H. Seo, Samsung |
| Progress in Actinic Mask Imaging: The Closest Look at Lines, Defects and Phase Roughness | I. Mochi, LBNL |
Keynote III |
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| Future of Memory Devices and EUV Lithography | H.S. Kim, Hynix |
Session: Masks II & Reticle Inspection II |
| Assessing EUV Mask Defectivity | B. LaFontaine, GlobalFoundries |
| Development of Mask Contamination/Inspection System by Coherent EUV Light | S. Lee, Hanyan University |
| Actinic Imaging of Known Native Defects on a Full-Field Mask | I. Mochi, LBNL |
| EUV Defects | K. Cummings, ASML |
| The Study on the Native Real Defect on EUV Mask Blank Using DUV Blank Inspection Tool and SEMATECH AIT | S. Huh, SEMATECH |
| Mask Blank Inspection Using DUV Light | S. Stokowski, KLA-Tencor |
Session: Resists II |
| Non-Traditional Molecular Resist Designs | T. Younkin, Intel |
| EUV Resist Materials and Processing at SELETE | K. Matsunaga, SELETE |
| A Detailed Study of Three Champion EUV Photoresists | C. Anderson, LBNL |
| Characterisation of EUV Resist Related Outgassing and Contamination | I. Pollentier, IMEC |
Session: Retical Contamination |
| Monitoring EUV Reticle Molecular Contamination on ASML's Alpha Demo Tool | U. Okoroanyanwu, GlobalFoundries |
| Observation of Carbon Contamination Growth of SFET-Exposed Mask, and Its Modeling | I. Nishiyama, SELETE |
| New Developments in Cleaning of EUV Mirrors and Reticles | N. Koster, TNO Science and Industry |
Session: Optics & Multilayer Coating |
| Optics for EUV Lithography | P. Kuerz, Carl Zeiss SMT AG |
| Flare Calculation on EUV Optics | K. Murakami, Nikon |
| Experimental Determination and Accurate Modeling of the EUV ADT Flare | E. Hendrickx, IMEC |
Session: Device Integration II |
| IEUVI Update | P. Gargini, Intel |
| Characterization of EUV ADT for 3X nm Node DRAM Patterning | S. Koo, Hynix |
| EUV Lithography Implementation on the Contact & Metal Interconnect Level of a 22 nm Node 0.099 µm2 6T-SRAM Cell | A. Goethals, IMEC |
| Feasibility Study of EUVL for High Volume Production Applying and Electrical Test Chip | S. Kyoh, Toshiba |
| Applicability of Device Fabrication for 35 nm HP Wiring with Extreme Ultra Violet Lithography | H. Aoyama, SELETE |
| Accurate Models for EUV Simulation and Their Use for Design Correction | G. Lorusso, IMEC |
Posters |
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| Present Status of Laser-Produced Plasma EUV Light Source | A. Sumitani, Gigaphoton |
| Backside Feature Transfer During Electrostatic Chucking of Masks | S. Govindjee, UC Berkeley |
| EUV Resist Contract Loss Determination Using Interference Lithography | A. Langner, IMEC |
| Quantitative Comparisons of Buried Defect Printability Predicted by Fast Simulation and Measured by Actinic Inspection | C. Clifford, UC Berkeley |
| Investigation of Buried EUV Mask Defect Printability Using Fast Simulation at the 22 and 16 nm Nodes | C. Clifford, UC Berkeley |
| Laser Heated Discharge Plasma (LED) Lithium EUV Source | M. McGeoch, PLEX LLC |
| Optical Element for Full Spectral Purity from IRE-Generated EUV Light Sources | A. van den Boogaard, FOM Institute |
| Highly Sensitive Non-Chemically Amplified Negative Resist for EUVL | M. Shirai, Osaka Univ |
| The Features of EUV Light Generation from Sn Discharge Produced Plasma Source with Rotating Disk Electrodes | V. Borisov, SRC RF TRINITI |
| Thermal Stability Lifetime Scaling of Multilayer EUVL Optics | S. Bruijn, FOM Institute |
| Development of Chemically Amplified EUV Resist Suitable for Ultra-thin Film Thickness | M. Shimizu, Semiconductor Materials Laboratory |
| Polyolefin sulfide's as Non-chemically Amplified Photoresists for Extreme Ultraviolet (EUV) Lithography | K. Lawrie, Univ of Queensland |
| Development of New Negative-Tone Molecular Resists Based on C-r-cyclohexylphenyl[4]calixarene for EUVL | M. Echigo, Mitsubishi Gas Chemical Co |
| Realization of EUV Pellicle with Single Crystal Silicon Membrane | S. Akiyama, Shin-Etsu Chemical |
| Evaluation Tool Development for Mirrors-Mask Degradation of EUV Exposure Tool Optics by Contaminations from SoCoMo | T. Inoue, EUVA |
| Reflectometry for Full-Size EUV Collector Mirrors for High Power LPP Sources | F. Scholze, PTB |
| EUV Source Development for AIMS and Blank Inspection | D. Gustafson, Energetiq |
| Recent Results from Our Automated Reflectometer for Measurement of Reflectivity of EUV Lithography Masks Blanks and OUR Plans for Developing a Reflectometer to Meet the HVM Requirements | R. Perera, EUV Technology |
| Performance of our Commercially Available EUV Resist Outgassing and Reticle Contamination Tool Model No. EUV-RER1314 | R. Perera, EUV Technology |
| Stabilization of IF Characteristics by Automatic Alignment System for Collector Module | D. Yamatani, EUVA |
| 24 nm Half-Pitch (HP) Contact Hole Resist Imaging Results | C. Koh, SEMATECH |
| Development of Novel Positive-Tone Resists for EUVL | T. Owada, Idemitsu Kosan Co Ltd |
| Inhibition of Deposition and Removal of Carbon Films on the Multilayer Surface by EUV Irradiation in the Presence of Water Vapor, Oxygen and Ozone Gases | M. Jiibe, Canon |
| Temperature-Induced Processes in Mo/B4C/Si Thin Films | V. de Rooij-Lohmann, FOM Institute |
| EUV-Induced Outgassing Measurements at the TNO/Carl Zeiss EUV Beamline Facility | A. Storm, TNO Science |
| Characterization of a Polymer Bound PAG Resist Process for EUV Lithography | B. Rathsack, Tokyo Electron |
| Study of EUV Pinch Dynamics and Overcoming Collector and Mask Issues | D. Ruzic, U of Illinois U-C |
| Development of a Detector for Applications in Measuring Ejected Debris at the Intermediate Focus of Extreme Ultraviolet Sources | S. Sporre, U of Illinois U-C |
| EUV-Induced Carbon Contamination of TiO2-Capped Multilayer Optics: Highly Non-Linear Scaling and the Effects of Water Vapor | S. Hill, NIST |
| Improvements for the Small Field Exposure Tool (SFET) in SELETE | S. Shirai, SELETE |
| Optimum Plasma Conditions for LPP - and LA-DPP- EUV Sources | K. Nishihara, Osaka Univ |
| Mitigation of EUV Optics Contamination | M. vanKampen, Carl Zeiss |
| The Dry Etching Performances of EUV Mask Absorbers | M. Kawashita, Toppan |
| EUV Mask Pattern Defect Inspection Using 199-nm Inspection Optics | T. Amano, MIRAI-SELETE |
| EUV Mask Pattern Defect Inspection for 32/22nm node | T. Abe, Dai Nippon Printing |
| Main Chain Decomposable Star Shaped Polymer for EUV Lithography | J. Iwashita, TOK |
| Line Edge Roughness Dependency on the Resist Components | H. Kim, Hanyang University |
| Defect Printability of Thin Absorber Mask in EUV Lithography with Refined LER Resist | T. Kamo, MIRAI-SELETE |
| Novel Ozone-based Cleaning Technique for EUV Optics Carbon Contamination | T. Anazawa, MIRAI-SELETE |
| Polycarbonate Based Non-chemically Amplified Photoresists for Extreme Ultraviolet Lithography | I. Blakey, Univ of Queensland |
| ETH Zurich's Tin Droplet LPP Source | B. Rollinger, Swiss Federal Institute of Technology Zurich |
| Measurement of Distribution of Debris and Radiation Over 5 sr for ETH Zurich EUV Source | A. Giovannini, ETH Zurich |
| In Situ Carbon Contamination Monitoring of EUV Optics by Spectroscopic Ellipsometry | J. Chen/E. Louis, FOM Institute |
| Pattern Shape Dependency of Mask Shadowing Effect and its Correction | J. Park, Hynix |
| EUV Underlayer Designs to Enhance Photospeed and Prevent Pattern Collapse | H. Xu/D.Guerrero, Brewer |
| Interaction of Selected MET tool Residual Gas hydrocarbons with the Ru(10-10) Surface | R. Bartynski, Rutgers Univ |
| Radiation Hydrodynamic Simulation of Laser-produced Tin Plasmas | A. Sunahara, Institute for Laser Technology |
| Electron-Induced Processes in EUV Resist Activation | B. Yakshinskiy, Rutgers Univ |
| Complex Investigation of Mo/Si Multilayer Optics After Exposure to Pulsed EUV Radiation | M. Schürmann, Fraunhofer |
| Bottom Extreme-Ultraviolet-Sensitive Coating for Evaluation of the Absorption Coefficient of Ultrathin Film | T. Kozawa, Osaka Univ |
| Latent Image Created using Selete Small-Field Exposure Tool for Extreme Ultraviolet Lithography | T. Kozawa, Osaka Univ |
| Patterning Dependency on Extreme Ultraviolet Wavelength and Bandwidth | J. Park, Applied Physics |
| Influence of Surface Roughness on 22 nm Node Extreme Ultraviolet Lithography | E. Kim, Applied Physics |
| Improvement of Imaging Properties by Optimizing the Mask Structure Using Phase Shift Effect | C. Jeong, Hanyang University |
| Optics Lifetime Under Pulsed and Synchrotron Radiation | S. Yulin, Fraunhofer-Institut fur Angewandte Optik und Feinmechanik |
| EUVL Image Placement Error Analysis with Rotatable Mask | L. Ren, SEMATECH |
| Determining Critical Defect Size for EUV Mask Substrates and Blanks | A. Rastegar, SEMATECH |
| e-beam Technology and EUV Photomask Repair - A Perfect Match | M. Waiblinger, Carl Zeiss |
| Plasma Cleaning of Carbon and Nanoparticles from EUV Materials | W. Lytle, U of Illinois U-C |
| Experimental Performance and Accurate Modeling of the EUV ADT | E. Hendrickx, IMEC |
| High Brightness NGL Multiplexed EUV Light Source for EUV Interferometer, Metrology & Inspection | S. Zakharov, Nano-UV |
| Developments on EUV-Reflectivity for High Volume Manufacturing of EUV Masks | A. Farahzadi/R. Lebert, AIXUV |
| Technology Readiness for HVM Source Collector | R. Ythier, Sagem |
| Characterization of Performance and Lifetime of EUV Source Collectors using a Full Size EUV Collector Reflectometer | U. Hinze, Laser Zentrum Hannover |
| Laser Inspection Induced Damage in Si and Ru Capped EUVL ML Blanks | T. Liang, Intel |
| Optimizing EUV Resist Imaging of Spin on Hard Mask Underlayers | J. Georger, SEMATECH |
| Protection Efficiency of SEMI Standard-Compliant EUV Pods | G. Huang, SEMATECH |
| Evaluation Results of a New EUV Reticle Pod based on SEMI E152-0709 | K. Ota, MIRAI-SELETE |
| Development Status of EUVL Mask Blank and Substrate | T. Kinoshita, Asahi Glass |
| Density Profiles of Photoresist Thin Films by High Precision X-Ray Reflectivity Analysis | J. Yoon, Dongjin |
| Study of Post-Develop Defect on Typical EUV Resist | M. Harumoto, SOKUDO |
| Production of High Purity Functional Water at Point-of-Use for Advanced Mask Cleaning Processes | A. Xia, Entegris |
| Experiments on Defect Inspection of Mask Blanks with an EUV Microscope | S. Herbert, Chair for Technology and Optical Systems |
| Simulation of Defect Scattering Efficiency on Multilayer Mirrors for EUV Mask Inspection Tool | A. Maryasov, Chair for Technology and Optical Systems |
| Actinic Mask Metrology: How to get Tools onto Track? | R. Lebert, AIXUV |
| Results Obtained with High Efficiency Gratings for EUV Applications | P. Michallon, CEA/Leti |
| A Comprehensive Assessment of EUV Mask Defect Printability | K. Cho, Samsung |
| Ion Beam Sputtering of DLC/Si Multilayer Mirrors | P. Gawlitza, IWS Fraunhofer |
| Classification of Operating Regimes to Determine Scaling Laws in Extreme Ultraviolet (EUV) Optics Contamination | A. Wüest, SEMATECH |
| Correlating Resist Photospeed using Various Exposure Platforms | W. Montgomery, SEMATECH |
| Investigation of Pulsed EUV Source Characteristics on Modeling Predictions of EUV Optics Contamination | A. Wüest, SEMATECH |
| Study on Depth Profile of Acid Generator Distribution in Poly(4-hydroxystyrene) films by Using X-ray Photoemission Spectroscopy (XPS) |
H. Yamamoto, Osaka University |
| Static test evaluation of EUV1 full-field exposure tools |
A. Myers, Intel |