Keynote |
|
| Optical Lithography Below 20nm | G. Willson, Univ of Texas |
| Line-Edge Roughness and the Ultimate Limits of Lithography | C. Mack, Lithoguru.com |
Session: Double Patterning I |
| Density Limits in Logic Metal1Using Double Patterning | V. Wiaux, IMEC |
| Double Patterning Lithography Overlay Components | V. Nagaswami, KLA-Tencor |
Session: Double Patterning Materials and Processing |
| Development of Freezing Free LLE Process | T. Nakamura, TOK |
| Exploration of New Resist Chemistries and Process Methods for Enabling Dual-Tone Development | C. Fonseca, TEL |
| Litho-Freeze-Litho-Etch (LFLE) Enabling Coat/Develop Track Process and Freeze CD Tuning Bake for >200wph Double Patterning | C. Pieczulewski, SOKUDO |
| Printing the Contact and Metal Layers for the 32 and 22 nm Node: Comparing Positive and Negative Tone Development Process | J. Bekaert, IMEC |
Session: Pattern Split Techniques |
| Double Patterning OPC and Design for 22 nm to 16 nm Device Nodes | K. Lucas, Synopsys |
| Wafer and Simulation Study Comparing 5 LELE Decomposition Algorithms for Both Compliant and Non-Compliant Layouts | G. Fenger, MentorGraphics |
| Simulation Study of a New Pitch Division Technique | X. Gu, Univ of Texas |
Session: Immersion Lithography Optimization |
| DP: Track Evolution or Revolution | A. Viswanathan, TEL |
| Challenges Building a 22nm Node 6T-SRAM Cell Using Immersion Lithography | M. Ercken, IMEC |
| Freeform Illumination Sources: An Experimental Study of Source-Mask Optimization for 22nm SRAM Cells | J. Bekaert, IMEC |
| Advances in Modeling and Optical Performance for DOEs used for OAI in Immersion Lithography | J. Carriere, Tessera |
Session: Double Patterning II |
| Technical and Manufacturing Challenges and the Prospects for HVM using ArF Pitch Division | S. Sivakumar, Intel |
| Lithography on the Edge | D. Medeiros, IBM |
| Towards 26nm HP: Advances in Litho-Process-Litho | R. Wong, IMEC |
| Spacer Deposition on Hardened Resists Patterns for Cost Effective SADP | S. Gaugiran, CEA-LETI |
Session: Lithography Tools and Integration |
| Immersion Scanner Nikon NSR-S620 for Double Patterning | S. Owa, Nikon |
| Improvements in Exposure Systems and Applications to Enable the Ultimate Extension with Immersion Lithography | F. deJong, ASML |
| Reliability Report of High Power Injection Lock Laser Light Source for Double Patterning and Double Patterning ArF Immersion Lithography | H. Tanaka, Gigaphoton |
| Characterization of Direct Alignment for a LFLE Double Patterning Process | D. Laidler, IMEC |
Session: Alternative Lithography Options |
| Can NanoImprint and ML2 Thrive ina 193i World? | L. Litt, SEMATECH |
| Readiness of Multiple-E-Beam Maskless Lithography | J. Chen, TSMC |
| Full-Field Liquid Immersion Interference Lithography | J. Jacob, Actinix |
| Interference Assisted Lithography (IAL): A Way to Contain the Lithography Costs for the 32nm and 22nm Half-Pitch Device Generations | R. Hendel, Periodic Structures |
Session: Advances in Photoresists and Materials |
| Resist Material for Negative Tone Development Process | S. Tarutani, Fujifilm |
| Polysulfone Based Non-CA Resists for 193 nm Immersion Lithography: Effect of Increasing Polymer Absorbance on Sensitivity | I. Blakey, Univ of Queensland |
| Inorganic Photoresists Based on Hafnium Oxide | M. Trikeriotis, Cornell |
Posters |
| A PECVD Bi-layer ARC Solution for Immersion Lithography | M. Lin, Applied Materials |
| Development of Reverse Materials and BARCs for Double Patterning Process | Y. Sakaida, Nisssan Chemicals |
| Bottom-Anti-Reflective Coatings (BARC) for LFLE Double Patterning Process | R. Sakamoto, Nisssan Chemicals |
| Understanding the Relationship Between the Evaporation Behavior of Water Droplets and the Formation of Stains on Polymer Surfaces | J. Kim, Pohang Univ |
| Process Parameter Influence to Negative Tone Development Process for Double Patterning | S. Tarutani, Fujifilm |
| Defectivity Investigation with Point-of-Use Filtration Parameter Changes | J. Braggin, Entegris |
| Robust Material and Processes for Double Patterning | H. Yaegashi, TEL |
| Tethered Naphthalene Derivatives as Sensitizers for Sequential Two Photon Photoacid Generators for Double Exposure Photolithography | P. Zimmerman, SEMATECH |
| Alternatives to Chemical Amplification for sub-32nm Photoresists | B. Smith, RIT |
| High Fluence Testing of Optical Materials for 193nm Lithography Extensions Applications | P. Zimmerman, SEMATECH |