2nd International EUVL Symposium Presentations Index

	TITLE	AUTHOR(S) / AFFILIATION
	OPENING REMARKS
00-A	Welcome / Opening Remarks	R. Hartman (ASML)
00-B	Keynote speech	C. Gwyn (Intel Corp.)
	TUESDAY, 30 SEPTEMBER, DAY 1
	SESSION 1: SOURCE
1A	Extreme Ultraviolet Sources for Lithograpjy Application	V. Banine et al (ASML)
1B	Laser-Produced-Plasma Light Source Development for EUVL at EUVA	A. Endo (EUVA)
1C	High Power Gas Discharge and Laser Produced Plasma Sources for EUVL	U. Stamm et al (Xtreme technologies)
1D	High Power Short Pulse and Cost Effective Laser Modules for Laser Produced Plasmas (LPP) EUV Source	S. Ellwi et al (Powerlase Ltd.)
1F	Power Scaling, Electrode Lifetime and Debris Mitigation of the Philips EUV Source	J. Pankert et al (Philips Extreme UV)
	SESSION 2: MASK
2A	Advances in the Ion Beam Thin Film Planarization Process for Mitigating EUVL Mask Defects	P. Mirkarimi et al (LLNL)
2B	Advancements in ULE© Glass: CTE Metrology Capabilities and Material Properties	K.E. Hrdina et al (Corning)
2C	EUV Mask and Blanks Development at HOYA	T. Shoki et al (HOYA)
2D	Actinic Mask Metrology for EUVL	H. Kinoshita et al (Himeji Inst. Tech.)
2E	Technology Steps to the Pilot Production of EUV Mask Blanks in 2005	F. Sobol et al (Schott Lithotec)
	SESSION 3: RESIST
3A	Resist Characterization for EUVL	W.-F. Domke et al (Infineon Tech.)
3B	Inband EUV Open Frame Resist Exposure TEUVL	R. Lebert et al (AIXUV)
3C	Absorbance Measurement of Polymers at EUV Wavelength: Correlation between Experimental and Theoretical Calculations	Y.J. Kwark (Cornell Univ.)
3D	Patterning Capabilities of EUV Resists	H. Cao et al (Intel Corp.)
3E	Resist Exposure Characteristics of EUV Resists	T. Watanabe et al (Himeji Inst. Tech.)
3F	Effect of Polymer Molecular Weight on AFM Polymer Aggregate Size and LER of EUV Resists	R. Brainard et al (Shipley)
	WEDNESDAY, 1 OCTOBER, DAY 2
	SESSION 4: TOOL
4A	SPECIAL TALK - International Cooperation on EUVL Development: The International EUV Initiative (IEUVI)	P. Gargini (Intel Corp.)
4B	Evaluation of the Critical Dimension Control Requirements in the ITRS Using Statistical Simulation and Error Budgets	S. Hector et al (Motorola)
4C	Throughput Model Consideration and Impact of Throughput Improvement Request on Exposure Tool	K. Ota et al (Nikon Corp.)
4D	ASML's EUVL Program Progress Update	N. Harned et al (ASML)
4E	Updates on Engineering Tests Stand (ETS): Lithographic and Tool Learning	S. Lee et al (Intel Corp.)
4F	Advances in EUVL Development for Sub-50nm DRAM Nodes	S. Hirscher et al (Infineon Tech.)
	SESSION 5: MASK
5A	Damage Free and Dry Removal of Nano-size Inorganic Particles from EUV Mask Layers by laser Induced Shockwaves	J.G. Park et al (Hanyang Univ.)
5B	Optimized Absorber-Stack Processes for EUV Masks	C. Holfeld et al (Infineon Tech.)
5C	Low-defect Coating Technology for the Production of Masks Blanks for EUVL	R. Randive et al (Veeco)
5D	Tiling-based Flare Compensation for EUVL	J. Cobb et al (Motorola)
5E	Particle-free EUV Reticle Handling and Storage	H. Werij et al (TNO TPD)
	SESSION 6: CONTAMINATION
6A	Investigation of Oxidation Resistance of EUV Multilayers	S. Bajt et al (LLNL)
6B	Progress in EUV Optics Life Time Expectations	M. Weiss et al (Carl Zeiss SMT)
6C	Investigation of Contamination Removal from EUVL Mask	K. Hamamoto et al (Himeji Inst. Tech.)
6D	Study of Ion Damage on EUV Light Source Collector Mirrors	H. Komori et al (EUVA)
6E	Study of EUV Source Collector Damage Mechanism	J. Gillaspy et al (NIST)
6F	Recent Observation of Condenesr Erosion in the ETS	L.E. Klebanoff et al (SNL)
	SESSION 7: SOURCE
7A	The Case for Tin as an EUV Source	M. Richardson et al (Univ. Central Florida)
7B	Progress of Tin Plasma Technologies at AIST	T. Tomie et al (AIST)
7C	Development of High Conversion Efficiency High Power EUV Sources for Lithography	V. Borisov et al (TRINITI)
7D	Japan MEXT Leading Project for Laser-Produced Plasma EUV Light Source Development	K. Nishihara et al (Univ. Osaka)
7E	Secondary-Plasma-Based Debris Mitigation for Next Generation EUVL Source	D. Ruzic et al (Univ. Illinois)
7F	Studies on x-ray Conversion Efficiency in Xe Cryogenic Targets	T. Mochizuki et al (Himeji Inst. Tech.)
	THURSDAY, 2 OCTOBER, DAY 3
	SESSION 8: OPTICS
8A	The EUV Optics Development Program at Carl Zeiss SMT AG	P. Kürz et al (Carl Zeiss SMT)
8B	EUV Projection Optics and Active Mirror Development at SAGEM	R. Geyl et al (SAGEM)
8C	Visible-Light Alignment of the MET Projection Optics	J.S. Taylor et al (LLNL)
8D	Measurement of the Impact of Flare on Line Width Roughness and Correlation with Aerial Image Metrics	M. Chandhok et al (Intel Corp.)
8E	Smoothing of the Substrate Surface by Mo/Si Multilayer Coating Deposited Using Ion Beam Sputtering	N. Kandaka et al (Nikon Corp.)
	SESSION 9: METROLOGY
9A	Metrology for EUVL Sources	M. Schürmann et al (Jenoptik)
9B	The Experimental EUV Interferometer with Several Measurement Methods	C. Ouchi et al (Canon)
9C	At-wavelength Interferometry of the 0.3 NA MET Optics	K. Goldberg et al (LBNL)
9D	Development of EUV-Scatterometry for CD Characterization of Masks	F. Scholze et al (PTB)
9E	NIST EUVL Metrology Programs	S. Grantham et al (NIST)
9F	CLOSING REMARKS	R. Hartman (ASML)