EUV Source Modeling Workshop

04 November 2004

[All linked files are .PDF format unless otherwise indicated]

Welcome and Introduction		Vivek Bakshi
Agenda		Katsunobu Nishihara
Technical Presentations
(A) Fundamental Atomic Data and Their Modeling
EUV emissions from charge-selected Xe ions using charge-transfer collisions in the ion-beam experiments (Which charge-states of Xe ions do contribute to the emission around 13.5 nm?)		H. Tanuma
Wavelength and Width of Transition Arrays of Xe and Sn		A. Sasaki
Sn Data for EUV Sources		K. Koshelev
(B) LPP and GDPP Conversion Efficiency (CE) Modeling
Conversion Efficiency of Laser-Produced Tin and Xenon Plasmas		A.Sunahara
Gas Discharge and Laser Produced Plasma Modeling and Simulation   (presentation not available at this time)		A. Hassanein
Source Modeling at Cymer		Curtis Rettig
(C) Modeling of High Energy Ion and Debris
Fast Ions from LPP		Y-G. Kang
Debris Generation in Sn and Li Plasmas		David Ruzic
Panel Discussions
What is the ultimate limit for CE for Xe and Sn based EUV Sources (GDPP/LPP)?
Panelists:	A. Sunahara (Inst. Laser Tech.) G. O’Sullivan (Dublin) A. Hassanein (ANL) M. Richardson (UCF) S. V. Zakharov (EPPRA) S. Fujioka (Osaka University)
What EUV source issues can be addressed by modeling? What are the areas of deficiency for modeling infrastructure (Fundamental data, code development, etc.) and how to address them?
Panelists:	A. Sasaki (JAERI-APR) A. Hassanein (ANL) B. Rice (Intel) C. Rettig (Cymer)
Workshop Highlights		Nishihara