B
billion; boron
Ba
barium
BACT
best available control technology
BARC
backside antireflective coating
BASE
Boston Area Semiconductor Education (Council)
BAW
bulk acoustic wave
BC
bias contrast
BCAD
business computer-aided manufacturing
BCB
benzocyclobutene
BCD
binary coded decimal; bulk chemical distribution
BDEV
behavior-level deviation
BDP
bilateral datum plane
BDS
Brownian Dynamics Simulation; beam delivery system
Be
beryllium
BENU
bull's eye nonuniformity
BEOL
back end-of-line
BES
backscatter electron signal
BESOI
bonded and etchedback SOI
BF
brightfield I
BFGS
Broyden-Fletcher-Goldfarb-Shanno optimization algorithm
BFL
buffered field-effect-transistor logic
BGA
ball grid array
BGS
bulk gas system
BHT
Brinell hardness test
BI
burn in
Bi
bismuth
BiCMOS
bipolar complementary metal-oxide semiconductor
BIFET
bipolar field-effect transistor
BIM
binary intensity mask
BiMOS
bipolar metal-oxide semiconductor
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BIST
built-in self test
BIT
bulk ion temperature
BITE
built-in test equipment
Bk
berkelium
BKM
best known methods
BLD
beam lead device
BLEVE
boiling liquid expanding vapor explosion
BLOK
barrier low-k
BMC
bubble memory controller
BMD
bulk micro defect
BOE
buffered oxide etchant
BOR
bottom of range
BOSS
Book of SEMI Standards; binary object storage system; burn-out
of sacrificial substances
BOX
buried oxide
BPE
beam profile ellipsometry
BPR
beam profile reflectometry; business process re-engineering
BPSG
boro phosphosilicate
BPTEOS
borophosphosilicate glass from a TEOS oxysilane source (TEOS is a trademark
of NALCO Chemical Company)
Br
bromine
BSA
Beta Site Agreement
BSED
backscattered electron detection or detector
BSR
backside rinse
BT
bismallimide triazene
BTAB
bumped tape automated bonding
BTI
bias temperature instability
BTS
biased thermal stress
BV
breakdown voltage
BVH
buried via hole
BW
bandwidth |
