SEMATECH Dictionary of Semiconductor Terms

A-Am | An-Az | B | C-Ch | Ci-Com | Con-Cz | D-De | Df-Dz | E-En | Eo-Ez | F-Fl
Fm-Fz | G | H | I | J-K | L | M-Mes | Met-Mz | N | O | P-Ph | Pi-Pq | Pr-Pz | Q | R
S-Se | Sh-So | Sp-Sta | Ste-Sz | T-Th | Ti-Tz | U-V | W-Z

"G"

G line n (adj G-line)		exposure wavelength of 436 nanometers. [SEMATECH]
gallium arsenide (GaAs) n		a semiconductor compound of gallium and arsenic used for the fabrication of semiconductor devices. Gallium arsenide has much greater mobility than silicon. [SEMATECH]
gallium inclusion n		a segregated, gallium-rich droplet incorporated into the surface structure of a gallium arsenide wafer. NOTE-Gallium inclusion is normally caused by insufficient vapor pressure at the termination of the crystal-growth process or by the complexing of gallium with dopants near saturation. [SEMI M10-89]
Gantt chart n		a graphic tool used to display the schedule and status of major milestones on a project. Milestones are listed on the Y-axis and time is shown on the X-axis. [SEMATECH]
gap fill n		the processes by which films (insulating or conducting) are deposited into gaps between adjacent structures without the presence of voids in the material. [SEMATECH]
gas n		a material that is shipped in compressed gas cylinders or acts as a gas upon release at normal temperatures and pressure, or is used or handled as a gas, whether or not in strict accordance with the definition of a compressed gas as set forth in Article 9 of the Uniform Fire Code. [SEMI S4-92]
gas cabinet n		a metal enclosure that is intended to provide local exhaust ventilation, protection for the gas cylinder from fire from without the cabinet, and protection for the surroundings from fire from within. [SEMI S4-92]
gas cylinder n		in the design of gas source equipment enclosures, a high-pressure compressed gas cylinder governed by Department of Transportation (DOT) regulations, or a non-DOT low pressure container used for liquid product having low vapor pressure. [Adapted from SEMI F14-93]
gas source control equipment (GSCE) n		the equipment assembly that extends from the product exit from the cylinder valve to the beginning of the distribution piping leading to the point of use (POU). These assemblies are usually mounted on panels. [SEMI F13-93] Also called process panel systems.
gas source equipment enclosure n		in the design of gas source equipment enclosures, an enclosure for the storage of gas containers and associated equipment. [SEMI F14-93]
gas temperature n		in a mass flow controller, the actual temperature of the flowing gas at the primary flow standard. [SEMI E18-91]
gate n		an electrode that regulates the flow of current in a metal oxide semiconductor transistor. [SEMATECH]
gate electrode n		the electrode of a metal oxide semiconductor field effect transistor (MOSFET); it controls the flow of electrical current between the source and the drain. [SEMATECH]
gate feature n		on plastic molded packages, the plastic protrusions/intrusions that result from a normal mold and degating operation. The gates are features of the mold that allow the molding compound to pass, in a controlled fashion, from the runners into the cavities. [SEMATECH] .
gate oxide n		a thin, high-quality silicon dioxide film that separates the gate electrode of a metal oxide semiconductor transistor from the electrically conducting channel in the silicon. [SEMATECH]
gateway n		the connecting link and its associated communications control software and hardware between two networks. [SEMATECH]
gauge pressure n		in mass flow controllers, the differential pressure measured relative to ambient pressure. For example, when the pressure within a system equals the prevailing ambient pressure, the gauge pressure equals zero. [SEMI E28-92]
gel time n		a measurement of the time required for a thermosetting molding compound, used in the manufacture of plastic semiconductor packages, to effectively solidify at the molding temperature such that further mold filling is impossible. A ram follower may be used to determine gel time. [SEMATECH]
GEM compliance n		in communications and control of semiconductor manufacturing equipment, adherence to the Generic Equipment Model standard for a specific capability. [Adapted from SEMI E30-94]
Generic Equipment Model (GEM) n		1 : a generalized model that describes a recommended implementation of the SEMI Equipment Communications Standard II. [SEMATECH] 2 : in communications and control of semiconductor manufacturing equipment, a reference model for any type of equipment. It contains functionality that can apply to most equipment, but does not address unique requirements of specific equipment. [SEMI E30-94] Also see equipment model and specific equipment model.
generic name n		a designation or identification, such as code name, code number, trade name, or brand name, used to identify a chemical by a designation other than its chemical name. [SEMATECH]
gettering n		1 : a controlled modification of the silicon crystal to draw impurities to the bulk, or to the back surface of the wafer. Contaminants are removed sufficiently far from the front surface, where the devices are built, to render their potential degrading effects negligible. [SEMATECH] 2 : the process that immobilizes impurities at locations away from the region of the specimen to be investigated. [ASTM F1241] t
glass n		a deposited film of silicon dioxide with additives to adjust coefficient of thermal expansion, color, conductivity, and melting point, generally doped with boron or phosphorus or both. [SEMATECH]
glass flow n		1 : in lithography, the movement of doped oxide (glass with boron and/or phosphorus dopant). Subjection to a high-temperature annealing process causes the glass to soften and flow. [SEMATECH] 2 : on a semiconductor package base or cap, the condition describing sealing glass that has been heated just sufficiently to remove all the screen printing mesh marks visible at 10X magnification. [SEMI G1-85]
glass flow angle n		the maximum angle, in degrees, between the wafer plane and the top surface of the glass film after flow, as it passes over a gate interconnect, after gas flow. [SEMATECH]
glass locks n		in metal leadframes for cerdip and cerpack type packages, the notches and cut-outs in the internal sections of the leads. These features hold the leads firmly in the glass seal and resist lead pull-out. [SEMATECH]
glass transition n		the reversible change in an amorphous polymer or in amorphous regions of a partially crystalline polymer from (or to) a viscous or rubbery condition to (or from) a hard or relatively brittle one. [ASTM D883-90] Also see glass transition temperature.
glass transition temperature (Tg) n		1 : the approximate midpoint of a temperature range over which glass transition takes place. [ASTM D883-90] Also see coefficient of thermal expansion. 2 : the temperature at which an amorphous polymer changes from the glassy state to the rubbery state. [SEMATECH]
glass void n		the absence of a sealing glass layer from a designated area. [SEMI G1-85]
glassware n		see quartzware.
glob-top n		a rounded mass of encapsulant material that covers the die in the chip-on-board assembly process following pretest and inspection. [SEMATECH]
global flatness n		of a semiconductor wafer, the total indicator reading (TIR) or the maximum focal plane deviation (FPD) relative to a specified reference plane within the fixed quality area (FQA). [SEMI M1-94] Also see site flatness.
global orientation n		the general orientation of a wafer or wafers in a tool; may be vertical or horizontal. [SEMI E15-91]
glove bag n		in testing for contamination, an enclosure that contains a controlled atmosphere and that allows handling of the contained elements through the use of gloves. [SEMATECH]
gold-ruled grating n		a gold surface with uniformly spaced grooves of known separation, to be used as a calibration standard for micrometer-scale measurements. [SEMATECH]
goniometer n		an instrument used to measure angles. NOTE-Goniometers are frequently used with X-ray diffraction equipment to measure crystal axis angles or for optical angle measurement. [SEMI M1-94 and ASTM F1241]
good field, fraction of n		the overlay capabilities of wafer steppers are quantified in terms of the fraction of good fields, F, out of the total number of fields on the wafer:

Back to index…